World's first 300 mm Power Gallium Nitride (GaN) Technology
2024-09-11
Infineon Technologies has succeeded in developing the world's first 300 mm power gallium nitride (GaN) wafer technology, accomplished in an existing and scalable high-volume manufacturing environment - a "breakthrough" which is said to "help substantially drive the market for GaN-based power semiconductors". Chip production on 300 mm wafers offers 2.3 times more chips per wafer than on 200 mm wafers. "The technological breakthrough will be an industry game-changer and enable us to unlock the full potential of gallium nitride", Jochen Hanebeck, CEO of Infineon Technologies, says. "Infineon is mastering all three relevant materials: silicon, silicon carbide and gallium nitride. Nearly one year after the acquisition of GaN Systems, we are demonstrating again that we are determined to be a leader in the fast-growing GaN market." Infineon has succeeded in manufacturing 300 mm GaN wafers on an integrated pilot line in existing 300 mm silicon production in its power fab in Villach/Austria. The company intends to "further scale GaN capacity aligned with market needs". Infineon claims that "300 mm GaN manufacturing will put Infineon in a position to shape the growing GaN market which is estimated to reach several billion US-Dollars by the end of the decade" and that "fully scaled 300 mm GaN production will contribute to GaN cost parity with silicon on R DS(on) level, which means cost parity for comparable Si and GaN products. The semiconductor manufacturer will present the first 300 mm GaN wafers to the public at the electronica trade show in November 2024 in Munich.
World's first 300 mm Power Gallium Nitride (GaN) Technology
Infineon Technologies has succeeded in developing the world's first 300 mm power gallium nitride (GaN) wafer technology, accomplished in an existing and scalable high-volume manufacturing environment - a "breakthrough" which is said to "help substantially drive the market for GaN-based power semiconductors". Chip production on 300 mm wafers offers 2.3 times more chips per wafer than on 200 mm wafers. "The technological breakthrough will be an industry game-changer and enable us to unlock the full potential of gallium nitride", Jochen Hanebeck, CEO of Infineon Technologies, says. "Infineon is mastering all three relevant materials: silicon, silicon carbide and gallium nitride. Nearly one year after the acquisition of GaN Systems, we are demonstrating again that we are determined to be a leader in the fast-growing GaN market." Infineon has succeeded in manufacturing 300 mm GaN wafers on an integrated pilot line in existing 300 mm silicon production in its power fab in Villach/Austria. The company intends to "further scale GaN capacity aligned with market needs". Infineon claims that "300 mm GaN manufacturing will put Infineon in a position to shape the growing GaN market which is estimated to reach several billion US-Dollars by the end of the decade" and that "fully scaled 300 mm GaN production will contribute to GaN cost parity with silicon on R DS(on) level, which means cost parity for comparable Si and GaN products. The semiconductor manufacturer will present the first 300 mm GaN wafers to the public at the electronica trade show in November 2024 in Munich.