The increasing use of Silicon Carbide (SiC) technology in medium-to-high-voltage applications such as transportation, electric grids, and heavy-duty vehicles is being propelled by the electrification of various systems. Microchip Technology has introduced the 3.3 kV XIFM plug-and-play mSiC™ gate driver with patented Augmented Switching™ technology to assist developers in implementing SiC solutions efficiently. This driver is designed to work immediately with preconfigured module settings, reducing design and evaluation time significantly.
This plug-and-play solution has already performed the intricate development effort of designing, testing, and qualifying a gate driver circuit design to accelerate time to market. The XIFM digital gate driver is a compact solution with digital control, an integrated power supply, and a sturdy fiber-optic interface that enhances noise immunity. This gate driver comes with predefined gate drive profiles for turning on and off, designed to enhance module performance.
The device features 10.2 kV primary-to-secondary reinforced isolation with integrated monitoring and protection functions such as temperature and DC link monitoring, Undervoltage Lockout (UVLO), Overvoltage Lockout (OVLO), short-circuit/overcurrent protection (DESAT), and Negative Temperature Coefficient (NTC). The newly introduced gate driver is also compliant with EN 50155, a crucial specification for railway applications.
Microchip facilitates the use of wide-bandgap (WBG) technology in power systems by offering turnkey solutions such as the new 3.3 kV plug-and-play mSiC gate driver, as the silicon carbide business expands and advances in higher voltage applications. This method can decrease design cycle time by up to 50% compared to a standard analog solution by having the gate drive circuitry preset.
Microchip introduces 3.3 kV XIFM plug-and-play mSiC gate driver to accelerate the adoption of HV SiC power modules
February 21, 2024 Maurizio Di Paolo EmilioThe 3.3 kV XIFM plug-and-play digital gate driver is designed to work out-of-the-box with high-voltage SiC-based power modules.
The increasing use of Silicon Carbide (SiC) technology in medium-to-high-voltage applications such as transportation, electric grids, and heavy-duty vehicles is being propelled by the electrification of various systems. Microchip Technology has introduced the 3.3 kV XIFM plug-and-play mSiC™ gate driver with patented Augmented Switching™ technology to assist developers in implementing SiC solutions efficiently. This driver is designed to work immediately with preconfigured module settings, reducing design and evaluation time significantly.
This plug-and-play solution has already performed the intricate development effort of designing, testing, and qualifying a gate driver circuit design to accelerate time to market. The XIFM digital gate driver is a compact solution with digital control, an integrated power supply, and a sturdy fiber-optic interface that enhances noise immunity. This gate driver comes with predefined gate drive profiles for turning on and off, designed to enhance module performance.
The device features 10.2 kV primary-to-secondary reinforced isolation with integrated monitoring and protection functions such as temperature and DC link monitoring, Undervoltage Lockout (UVLO), Overvoltage Lockout (OVLO), short-circuit/overcurrent protection (DESAT), and Negative Temperature Coefficient (NTC). The newly introduced gate driver is also compliant with EN 50155, a crucial specification for railway applications.
Microchip facilitates the use of wide-bandgap (WBG) technology in power systems by offering turnkey solutions such as the new 3.3 kV plug-and-play mSiC gate driver, as the silicon carbide business expands and advances in higher voltage applications. This method can decrease design cycle time by up to 50% compared to a standard analog solution by having the gate drive circuitry preset.